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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Dassi, Minaxi | - |
| dc.contributor.author | Sharma, Rajnish, Pandey, Rahul | - |
| dc.date.accessioned | 2021-11-29T06:09:35Z | - |
| dc.date.available | 2021-11-29T06:09:35Z | - |
| dc.date.issued | 2021-06-21 | - |
| dc.identifier.uri | 10.1109/DevIC50843.2021.9455761 | - |
| dc.description.abstract | This work reports the application of novel magnesium silicide (Mg 2 Si) source heterojunction double gate tunnel field effect transistor with palladium (Pd) gate metal for highly sensitive hydrogen gas sensor. The impact of hydrogen gas pressure on sensor is considered by change in the workfunction of palladium gate metal as a function of hydrogen gas pressure. Heterojunction formed by Mg 2 Si (source) and silicon (channel) at the source-channel interface in the gas sensor under consideration compensates for the low ON currents of conventional TFET devices. All the simulation results are obtained from Silvaco atlas TCAD simulator. Investigations reveal that the behavior of proposed sensor is reasonably sensitive to the hydrogen gas as it displayed a wide range of sensitivity from the order of 10 3 to 10 7 | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE Xplore | en_US |
| dc.subject | TFETs | en_US |
| dc.subject | Sensitivity | en_US |
| dc.subject | Silicides | en_US |
| dc.subject | Simulation | en_US |
| dc.subject | Hydrogen | en_US |
| dc.subject | Logic gates | en_US |
| dc.subject | Heterojunctions | en_US |
| dc.subject | Chemiical Engineering | en_US |
| dc.title | Magnesium Silicide Source Double Palladium Metal Gate TFET for Highly Sensitive Hydrogen Gas Sensor | en_US |
| dc.type | Presentation | en_US |
| Appears in Collections: | Conference | |
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